EFFICIENCY DEPENDENCE OF A SINGLE P–N JUNCTION GAAS SOLAR CELL ON SOLAR CONCENTRATION

Authors

  • Nazarova Nasibaxon Muxtorbek qizi Xiva shahar 1-son ixtisoslashtirilgan maktab-internati, o‘qituvchi Author
  • Jumaboyev Bexzod Quronboy o‘g‘li Urganch davlat universiteti nasibaxonnazarova895@gmail.com Author

Keywords:

GaAs solar cell; Solar concentration; Vertical structure; Single p–n junction; Sentaurus TCAD; Efficiency.

Abstract

This study investigates the performance of gallium arsenide (GaAs) solar cells under concentrated sunlight conditions. Although GaAs solar cells achieve 27.6% efficiency at 255 suns, their efficiency drops to about 24% at nearly 1000 suns due to saturation and enhanced recombination losses. To overcome this limitation, a single p–n junction vertical GaAs solar cell structure is proposed and simulated using the Sentaurus TCAD software. The model considers a device width of H = 5 µm and illumination based on the AM1.5d solar spectrum (1 sun = 1000 W/m²). The results demonstrate that the vertical structure can maintain higher efficiency and improved stability under elevated solar concentration levels.

References

[1] C. Algora and V. Díaz, “Guidance for reducing photovoltaic cost using very high concentrator GaAs solar cells,” in Proc. 14th European Photovoltaic Solar Energy Conf., Barcelona, Spain, 1997, pp. 1724–1727.

[2] M. A. Green et al., “Solar cell efficiency tables (version 16),” Prog. Photovolt., vol. 8, pp. 377–383, 2000.

[3] S. M. Vernon et al., “High efficiency concentrator cells from GaAs on Si,” in Proc. 22nd IEEE PV Specialists Conf., 1991, pp. 353–357.

[4] Sentaurus™ Device User Guide, Version O-2018.06, Mountain View, California: Synopsys, Inc., 2018.

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Published

2025-10-25