DEPENDENCE OF SINGLE P–N JUNCTION GaAs SOLAR CELL EFFICIENCY ON SOLAR CONCENTRATION AT DIFFERENT P-LAYER DOPING LEVELS
Keywords:
GaAs solar cell; Vertical structure; Solar concentration; Sentaurus TCAD; Efficiency; p–n junction.Abstract
In this work, the efficiency of a vertical single p–n junction GaAs solar cell was simulated using the Sentaurus TCAD software under varying solar concentration levels. While conventional horizontal GaAs solar cells experience efficiency degradation beyond approximately 1000 suns, the proposed vertical structure demonstrates a continuous increase in efficiency up to 10 000 suns for all considered p-layer doping concentrations. The results confirm that vertical GaAs solar cells are promising for high-concentration photovoltaic applications.
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